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Home > Products > Non-Contact type resistance measurement
Non-Contact type resistance measurement

Non-Contact type resistance measurement

Product Features

◆non-contact eddy-current probes

◆Non-Damage measurement by non-contact measurement

◆Fast testing speed

◆Good repeatability

◆High test sensitivity

Application scope

◆ Semiconductor material

◆ Graphene

◆ Transparent conductive film

◆ Carbon Nanotubes

◆ Metal

ParametersProbeResistance RangeResistance RangeTesting Method
RangeLow-resistance probe0.005-1 Ω/sq0.25-50 mΩ·cmEddy current method, non- contact
Mid-resistance probe0.05-10 Ω/sq2.5-500 mΩ·cm
High-resistance probe10-3000 Ω/sq0.5-150 Ω·cm
Ingot probe0.01-2 Ω·cm
Repeatability<0.2%(≤50% range)<0.5%(>50% range)
Accuracy<2%(≤50% range)<3%(>50% range)
Probe InformationType of Probe: Dual-probe (upper and lower probes with a 2-3mm gap), Probe Diameter: Outer diameter 20mm, Inner diameter 14mm (effective testing part), Probe Gap: 30mm
Coordinate SettingsArbitrary Coordinate Settings
Store dataInternal Database Storage (Exportable Table Files), PDF Test Report containing test information (time, operator), wafer information (number, size, thickness), data information (number of test points, max/min/average values, relative standard deviation, etc.), contour maps, surface maps, etc. CSV
Table Data
Storable to Remote Server
Modifiable report information as per customer requirements
WAFER InformationSize: 2”-8” (inches)Thickness:100-1500mm
System RequirementsPower Supply: AC220V,50/60Hz Relative Humidity:20%-80%RHPower: 600W Environment: Temperature 24℃±10℃ Size: 975*465*425(mm) Lifespan: >10 years
Eddy current method principle
When a detection coil carrying an alternating current approaches the tested conductor, due to the coil’s alternating magnetic field, eddy currents are induced in the tested conductor, creating a magnetic field opposite to the original magnetic field, partially offsetting the original magnetic field, resulting in changes in the resistance and inductance of the detection coil. Eddy current method principle
Applicable Materials
MaterialResistivitySheet Resistance
Silicon waferYY
Sic wafer /IngotYY
GaO wafer /IngotYY
GaN wafer 2DEGIYY
GaAs 2EDGNY
GZO/LTPS/ITONY
flat panel)NY
TCO(Touch panel)NY
GrapheneNY
Metal filmNY
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